Design of “Low Stress” Post-CMP Cleaning Processes for Advanced Technology Nodes
Category of Work
Article
Publication Title
ECS Transactions
Abstract
The Chemical Mechanical Planarization (CMP) process can cause various defects, and they can be classified as mechanical (i.e., scratching), chemical (i.e., corrosion), or physiochemical (i.e., adsorbed contaminants) according to the mechanism of formation. Traditionally, a contact cleaning method involving a poly-vinyl alcohol (PVA) brush is used to transfer cleaning chemistry to the substrate of interest as well as provide the necessary mechanical energy for defect removal. While this process is effective in contaminant removal its reliance on shear forces can induce secondary defect modes, such as scratching. To minimize the aforementioned induced defectivity during contact p-CMP processes, the implementation of non-contact modalities has become of the utmost importance. This work will focus on the rationale design of p-CMP cleaning systems for emerging materials such as SiC, carbon-doped oxides, and metals. "Soft" cleaning chemistry structure (i.e., shape and charge), and processes play a critical role in cleaning efficacy under low stress conditions.
DOI
doi.org/10.1149/10804.0003ecst
Publication Date
5-2022
Recommended Citation
Cahue, Kiana A.; Dudek, Abigail L.; Miliauskas, Mantas M.; Cahue, Tatiana R.; Mlynarski, Amy; and Keleher, Jason J., "Design of “Low Stress” Post-CMP Cleaning Processes for Advanced Technology Nodes" (2022). Chemistry Department Faculty Articles. 42.
https://digitalcommons.lewisu.edu/chemistry_facpubs/42
